auf Bestellung 111000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.32 EUR |
| 9000+ | 0.29 EUR |
| 24000+ | 0.27 EUR |
| 45000+ | 0.26 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDN304PZ ON Semiconductor
Description: MOSFET P-CH 20V 2.4A SUPERSOT3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 10 V.
Weitere Produktangebote FDN304PZ nach Preis ab 0.26 EUR bis 1.47 EUR
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FDN304PZ | Hersteller : ON Semiconductor |
 Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R |
auf Bestellung 111000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDN304PZ | Hersteller : onsemi |
Description: MOSFET P-CH 20V 2.4A SUPERSOT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 10 V |
auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDN304PZ | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2996 Stücke: Lieferzeit 7-14 Tag (e) |
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FDN304PZ | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
auf Bestellung 2996 Stücke: Lieferzeit 14-21 Tag (e) |
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FDN304PZ | Hersteller : onsemi |
Description: MOSFET P-CH 20V 2.4A SUPERSOT3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 10 V |
auf Bestellung 45734 Stücke: Lieferzeit 21-28 Tag (e) |
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FDN304PZ | Hersteller : onsemi / Fairchild |
MOSFET P-Ch PowerTrench Specified 1.8V |
auf Bestellung 475 Stücke: Lieferzeit 14-28 Tag (e) |
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FDN304PZ | Hersteller : ONSEMI |
Description: ONSEMI - FDN304PZ - Leistungs-MOSFET, p-Kanal, 20 V, 2.4 A, 0.036 ohm, SuperSOT, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.4A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 800mV euEccn: NLR Verlustleistung: 500mW productTraceability: No Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.036ohm |
auf Bestellung 12283 Stücke: Lieferzeit 14-21 Tag (e) |
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FDN304PZ | Hersteller : ONSEMI |
Description: ONSEMI - FDN304PZ - Leistungs-MOSFET, p-Kanal, 20 V, 2.4 A, 0.036 ohm, SuperSOT, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.4A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 800mV euEccn: NLR Verlustleistung: 500mW productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.036ohm |
auf Bestellung 12283 Stücke: Lieferzeit 14-21 Tag (e) |
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FDN304PZ | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R |
auf Bestellung 111000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDN304PZ | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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FDN304PZ | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |