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FDN359BN

FDN359BN onsemi

fdn359bn-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 30V 2.7A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 2.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
auf Bestellung 120000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.37 EUR
6000+ 0.36 EUR
9000+ 0.33 EUR
30000+ 0.32 EUR
75000+ 0.31 EUR
Mindestbestellmenge: 3000
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Technische Details FDN359BN onsemi

Description: MOSFET N-CH 30V 2.7A SUPERSOT3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Rds On (Max) @ Id, Vgs: 46mOhm @ 2.7A, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V.

Weitere Produktangebote FDN359BN nach Preis ab 0.33 EUR bis 1.11 EUR

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FDN359BN FDN359BN Hersteller : onsemi fdn359bn-d.pdf Description: MOSFET N-CH 30V 2.7A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 2.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
auf Bestellung 125142 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.09 EUR
28+ 0.95 EUR
100+ 0.66 EUR
500+ 0.52 EUR
1000+ 0.42 EUR
Mindestbestellmenge: 24
FDN359BN FDN359BN Hersteller : onsemi / Fairchild FDN359BN_D-2312922.pdf MOSFET 30V N-Channel PowerTrench MOSFET
auf Bestellung 32433 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
47+1.11 EUR
55+ 0.95 EUR
100+ 0.67 EUR
500+ 0.52 EUR
1000+ 0.42 EUR
3000+ 0.36 EUR
9000+ 0.33 EUR
Mindestbestellmenge: 47
FDN359BN FDN359BN Hersteller : ON Semiconductor fdn359bn-d.pdf Trans MOSFET N-CH 30V 2.7A 3-Pin SOT-23 T/R
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
FDN359BN Hersteller : ONSEMI fdn359bn-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Mounting: SMD
Kind of package: reel; tape
Case: SuperSOT-3
On-state resistance: 75mΩ
Power dissipation: 0.5W
Polarisation: unipolar
Drain current: 2.7A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
FDN359BN Hersteller : ONSEMI fdn359bn-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Mounting: SMD
Kind of package: reel; tape
Case: SuperSOT-3
On-state resistance: 75mΩ
Power dissipation: 0.5W
Polarisation: unipolar
Drain current: 2.7A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Produkt ist nicht verfügbar