FDP020N06B-F102 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20930 pF @ 30 V
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20930 pF @ 30 V
auf Bestellung 1705 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 14.27 EUR |
50+ | 11.3 EUR |
100+ | 9.69 EUR |
500+ | 8.61 EUR |
1000+ | 7.37 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDP020N06B-F102 onsemi
Description: MOSFET N-CH 60V 120A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V, Power Dissipation (Max): 333W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20930 pF @ 30 V.
Weitere Produktangebote FDP020N06B-F102 nach Preis ab 6.99 EUR bis 14.35 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FDP020N06B-F102 | Hersteller : onsemi / Fairchild | MOSFET N-Channel PwrTrench 60V 313A 2mOhm |
auf Bestellung 715 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
FDP020N06B-F102 | Hersteller : ON Semiconductor |
auf Bestellung 720 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||||
FDP020N06B-F102 | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 60V 313A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |