Produkte > FAIRCHILD SEMICONDUCTOR > FDP039N08B-F102
FDP039N08B-F102

FDP039N08B-F102 Fairchild Semiconductor

ONSM-S-A0003584668-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 80V 120A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9450 pF @ 40 V
auf Bestellung 399 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
69+11.41 EUR
Mindestbestellmenge: 69
Produktrezensionen
Produktbewertung abgeben

Technische Details FDP039N08B-F102 Fairchild Semiconductor

Description: MOSFET N-CH 80V 120A TO220-3, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V, Power Dissipation (Max): 214W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9450 pF @ 40 V.

Weitere Produktangebote FDP039N08B-F102 nach Preis ab 9.83 EUR bis 20.57 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FDP039N08B-F102 FDP039N08B-F102 Hersteller : onsemi / Fairchild FDP039N08B_D-2312865.pdf MOSFET Hi Intg PWM contrlr Green-Mode
auf Bestellung 1263 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
3+18.2 EUR
10+ 15.6 EUR
50+ 14.72 EUR
100+ 12.53 EUR
250+ 11.41 EUR
500+ 9.85 EUR
1000+ 9.83 EUR
Mindestbestellmenge: 3
FDP039N08B-F102 FDP039N08B-F102 Hersteller : onsemi ONSM-S-A0003584668-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 80V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9450 pF @ 40 V
auf Bestellung 684 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+20.57 EUR
10+ 18.57 EUR
100+ 15.37 EUR
500+ 13.39 EUR
Mindestbestellmenge: 2
FDP039N08B-F102 Hersteller : ONSEMI ONSM-S-A0003584668-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - FDP039N08B-F102 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)