FDP047N08-F102 ONSEMI
Hersteller: ONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 116A; Idm: 656A; 168W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 116A
Pulsed drain current: 656A
Power dissipation: 168W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 23+ | 3.17 EUR |
| 24+ | 2.97 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDP047N08-F102 ONSEMI
Description: MOSFET N-CH 75V 164A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 164A (Tc), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V, Power Dissipation (Max): 268W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 25 V.
Weitere Produktangebote FDP047N08-F102 nach Preis ab 2.97 EUR bis 6.73 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
FDP047N08-F102 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 116A; Idm: 656A; 168W; TO220-3 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 75V Drain current: 116A Pulsed drain current: 656A Power dissipation: 168W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
 |
FDP047N08-F102 | Hersteller : onsemi |
Description: MOSFET N-CH 75V 164A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 164A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V Power Dissipation (Max): 268W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 25 V |
auf Bestellung 2396 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||
| FDP047N08-F102 | Hersteller : ONSEMI |
Description: ONSEMI - FDP047N08-F102 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 15597 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||
 |
FDP047N08-F102 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 75V 164A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
|||||||||||||
 |
FDP047N08-F102 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 75V 164A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
|||||||||||||
 |
FDP047N08-F102 | Hersteller : onsemi / Fairchild |
MOSFET PT3 75V |
Produkt ist nicht verfügbar |