FDP16AN08A0 ON Semiconductor
auf Bestellung 1395 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 98+ | 1.62 EUR |
| 104+ | 1.48 EUR |
| 113+ | 1.31 EUR |
| 250+ | 1.19 EUR |
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Technische Details FDP16AN08A0 ON Semiconductor
Description: MOSFET N-CH 75V 9A/58A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 58A, 10V, Power Dissipation (Max): 135W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 25 V.
Weitere Produktangebote FDP16AN08A0 nach Preis ab 1.19 EUR bis 4.52 EUR
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FDP16AN08A0 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 75V 9A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1395 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP16AN08A0 | Hersteller : onsemi / Fairchild |
MOSFET 75V 58a 0.016 Ohms/VGS=10V |
auf Bestellung 920 Stücke: Lieferzeit 14-28 Tag (e) |
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FDP16AN08A0 | Hersteller : onsemi |
Description: MOSFET N-CH 75V 9A/58A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 58A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 25 V |
auf Bestellung 766 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDP16AN08A0 | Hersteller : ONSEMI |
Description: ONSEMI - FDP16AN08A0 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 3500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP16AN08A0 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 75V 9A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FDP16AN08A0 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 75V 9A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FDP16AN08A0 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 44A; 135W; TO220-3 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 75V Drain current: 44A Power dissipation: 135W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 37mΩ Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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FDP16AN08A0 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 44A; 135W; TO220-3 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 75V Drain current: 44A Power dissipation: 135W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 37mΩ Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |