FDP18N50 ONSEMI
Hersteller: ONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 88 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 21+ | 3.42 EUR |
| 24+ | 3.09 EUR |
| 30+ | 2.43 EUR |
| 32+ | 2.3 EUR |
| 250+ | 2.22 EUR |
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Technische Details FDP18N50 ONSEMI
Description: MOSFET N-CH 500V 18A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V, Power Dissipation (Max): 235W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V.
Weitere Produktangebote FDP18N50 nach Preis ab 2.3 EUR bis 6.74 EUR
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FDP18N50 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 235W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP18N50 | Hersteller : onsemi |
Description: MOSFET N-CH 500V 18A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V Power Dissipation (Max): 235W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V |
auf Bestellung 675 Stücke: Lieferzeit 21-28 Tag (e) |
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FDP18N50 | Hersteller : onsemi / Fairchild |
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auf Bestellung 9702 Stücke: Lieferzeit 14-28 Tag (e) |
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| FDP18N50 | Hersteller : ON-Semicoductor |
Transistor N-Channel MOSFET; 500V; 30V; 265mOhm; 18A; 235W; -55°C ~ 150°C; FDP18N50 TFDP18n50 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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FDP18N50 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FDP18N50 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FDP18N50 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |