FDP26N40 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 400V 26A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 13A, 10V
Power Dissipation (Max): 265W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3185 pF @ 25 V
auf Bestellung 164 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 6.81 EUR |
| 10+ | 5.71 EUR |
| 100+ | 4.62 EUR |
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Technische Details FDP26N40 onsemi
Description: MOSFET N-CH 400V 26A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 13A, 10V, Power Dissipation (Max): 265W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3185 pF @ 25 V.
Weitere Produktangebote FDP26N40 nach Preis ab 5.46 EUR bis 7.95 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FDP26N40 | Hersteller : onsemi / Fairchild |
MOSFET 400V N-Channel |
auf Bestellung 2747 Stücke: Lieferzeit 14-28 Tag (e) |
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| FDP26N40 | Hersteller : Fairchild |
Transistor N-Channel MOSFET; 400V; 30V; 160mOhm; 26A; 265W; -55°C ~ 150°C; FDP26N40 TFDP26n40 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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FDP26N40 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 400V 26A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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| FDP26N40 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 15.6A; 265W; TO220-3 Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 0.16Ω Drain current: 15.6A Power dissipation: 265W Drain-source voltage: 400V Kind of package: tube Case: TO220-3 Mounting: THT Kind of channel: enhanced Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDP26N40 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 15.6A; 265W; TO220-3 Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 0.16Ω Drain current: 15.6A Power dissipation: 265W Drain-source voltage: 400V Kind of package: tube Case: TO220-3 Mounting: THT Kind of channel: enhanced Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |