auf Bestellung 359 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
12+ | 4.39 EUR |
15+ | 3.64 EUR |
100+ | 2.91 EUR |
250+ | 2.68 EUR |
500+ | 2.44 EUR |
1000+ | 2.12 EUR |
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Technische Details FDP3652 onsemi / Fairchild
Description: MOSFET N-CH 100V 9A/61A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 61A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 61A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V.
Weitere Produktangebote FDP3652
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FDP3652 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP3652 | Hersteller : ONSEMI | FDP3652 THT N channel transistors |
Produkt ist nicht verfügbar |
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FDP3652 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FDP3652 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FDP3652 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 9A/61A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 61A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDP3652 | Hersteller : Fairchild Semiconductor |
Description: POWER FIELD-EFFECT TRANSISTOR, 9 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 61A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V |
Produkt ist nicht verfügbar |