auf Bestellung 367 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 5.46 EUR |
| 11+ | 5.02 EUR |
| 100+ | 4.03 EUR |
| 500+ | 3.33 EUR |
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Technische Details FDP65N06 onsemi / Fairchild
Description: MOSFET N-CH 60V 65A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 32.5A, 10V, Power Dissipation (Max): 135W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V.
Weitere Produktangebote FDP65N06
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| FDP65N06 |
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auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDP65N06 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 65A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FDP65N06 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 65A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 32.5A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V |
Produkt ist nicht verfügbar |