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FDPC5030SG onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 30V 17A PWRCLIP56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W, 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 25A
Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power Clip 56
Part Status: Active
auf Bestellung 6008 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 4.39 EUR |
| 10+ | 3.65 EUR |
| 100+ | 2.9 EUR |
| 500+ | 2.46 EUR |
| 1000+ | 2.08 EUR |
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Technische Details FDPC5030SG onsemi
Description: MOSFET 2N-CH 30V 17A PWRCLIP56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, 1.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 17A, 25A, Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V, Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: Power Clip 56, Part Status: Active.
Weitere Produktangebote FDPC5030SG nach Preis ab 1.99 EUR bis 4.39 EUR
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FDPC5030SG | Hersteller : onsemi / Fairchild |
MOSFET PT8+ N & PT8 N |
auf Bestellung 1793 Stücke: Lieferzeit 14-28 Tag (e) |
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FDPC5030SG Produktcode: 139909 |
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FDPC5030SG | Hersteller : ON Semiconductor |
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FDPC5030SG | Hersteller : ON Semiconductor |
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FDPC5030SG | Hersteller : ON Semiconductor |
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FDPC5030SG | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 17A PWRCLIP56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W, 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A, 25A Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power Clip 56 Part Status: Active |
Produkt ist nicht verfügbar |