FDPF20N50T ONSEMI
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 38.5W
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Pulsed drain current: 80A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 59.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 38.5W
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Pulsed drain current: 80A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 59.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
16+ | 4.46 EUR |
18+ | 3.98 EUR |
250+ | 2.45 EUR |
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Produktbewertung abgeben
Technische Details FDPF20N50T ONSEMI
Description: MOSFET N-CH 500V 20A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V, Power Dissipation (Max): 38.5W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V.
Weitere Produktangebote FDPF20N50T nach Preis ab 4.46 EUR bis 8.97 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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FDPF20N50T | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 38.5W Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12.9A Pulsed drain current: 80A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 59.5nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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FDPF20N50T | Hersteller : onsemi / Fairchild | MOSFET 500V 20A NCH MOSFET |
auf Bestellung 10840 Stücke: Lieferzeit 217-231 Tag (e) |
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FDPF20N50T | Hersteller : ON Semiconductor |
auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDPF20N50T | Hersteller : ON Semiconductor | Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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FDPF20N50T | Hersteller : ON Semiconductor | Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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FDPF20N50T | Hersteller : ON Semiconductor | Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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FDPF20N50T | Hersteller : ON Semiconductor | Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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FDPF20N50T | Hersteller : ON Semiconductor | Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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FDPF20N50T | Hersteller : onsemi |
Description: MOSFET N-CH 500V 20A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V Power Dissipation (Max): 38.5W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V |
Produkt ist nicht verfügbar |