FDPF4N60NZ ON Semiconductor
auf Bestellung 1690 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 244+ | 0.65 EUR |
| 250+ | 0.61 EUR |
| 267+ | 0.55 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.45 EUR |
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Technische Details FDPF4N60NZ ON Semiconductor
Description: MOSFET N-CH 600V 3.8A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.9A, 10V, Power Dissipation (Max): 28W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V.
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Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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FDPF4N60NZ | Hersteller : ON Semiconductor |
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FDPF4N60NZ | Hersteller : onsemi |
Description: MOSFET N-CH 600V 3.8A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.9A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V |
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FDPF4N60NZ | Hersteller : onsemi / Fairchild |
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