FDPF5N50T Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 5
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Description: POWER FIELD-EFFECT TRANSISTOR, 5
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
auf Bestellung 57864 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
485+ | 1.49 EUR |
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Technische Details FDPF5N50T Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 5, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V, Power Dissipation (Max): 28W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V.
Weitere Produktangebote FDPF5N50T nach Preis ab 2.11 EUR bis 3.64 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
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FDPF5N50T | Hersteller : onsemi / Fairchild | MOSFET 500V N-Channel |
auf Bestellung 1197 Stücke: Lieferzeit 14-28 Tag (e) |
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FDPF5N50T | Hersteller : ONSEMI |
Description: ONSEMI - FDPF5N50T - Leistungs-MOSFET, n-Kanal, 500 V, 5 A, 1.15 ohm, TO-220F Drain-Source-Spannung Vds: 500 Dauer-Drainstrom Id: 5 Qualifikation: - Verlustleistung Pd: 28 Gate-Source-Schwellenspannung, max.: 5 Verlustleistung: 28 Bauform - Transistor: TO-220F Anzahl der Pins: 3 Produktpalette: UniFET Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 1.15 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 1.15 SVHC: Lead (17-Jan-2022) |
auf Bestellung 821 Stücke: Lieferzeit 14-21 Tag (e) |
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FDPF5N50T | Hersteller : ON Semiconductor | Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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FDPF5N50T | Hersteller : onsemi |
Description: MOSFET N-CH 500V 5A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V |
Produkt ist nicht verfügbar |