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FDS3512

FDS3512 onsemi / Fairchild

FDS3512_D-2312784.pdf Hersteller: onsemi / Fairchild
MOSFET SO-8
auf Bestellung 97 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+6.73 EUR
10+ 6.06 EUR
100+ 4.86 EUR
500+ 4 EUR
1000+ 3.33 EUR
2500+ 3.07 EUR
Mindestbestellmenge: 8
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Technische Details FDS3512 onsemi / Fairchild

Description: MOSFET N-CH 80V 4A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 40 V.

Weitere Produktangebote FDS3512 nach Preis ab 3.49 EUR bis 7.18 EUR

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FDS3512 FDS3512 Hersteller : onsemi fds3512-d.pdf Description: MOSFET N-CH 80V 4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 40 V
auf Bestellung 4594 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.1 EUR
10+ 6.39 EUR
100+ 5.13 EUR
500+ 4.22 EUR
1000+ 3.49 EUR
Mindestbestellmenge: 4
FDS3512 FDS3512 Hersteller : onsemi fds3512-d.pdf Description: MOSFET N-CH 80V 4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 40 V
auf Bestellung 4594 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.18 EUR
10+ 6.45 EUR
100+ 5.18 EUR
500+ 4.26 EUR
1000+ 3.53 EUR
Mindestbestellmenge: 4
FDS3512 Hersteller : FAIRCHIL fds3512-d.pdf 09+ SOP8
auf Bestellung 1002 Stücke:
Lieferzeit 21-28 Tag (e)
FDS3512 Hersteller : FAIRCHILD fds3512-d.pdf 07+ SO-8
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
FDS3512 Hersteller : FAIRCHILD fds3512-d.pdf SO-8
auf Bestellung 41000 Stücke:
Lieferzeit 21-28 Tag (e)
FDS3512 FDS3512 Hersteller : ON Semiconductor fds3512-d.pdf Trans MOSFET N-CH 80V 4A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
FDS3512 FDS3512 Hersteller : onsemi fds3512-d.pdf Description: MOSFET N-CH 80V 4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 40 V
Produkt ist nicht verfügbar