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FDS3590

FDS3590 ONSEMI

fds3590-d.pdf Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 6.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 86mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2129 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
66+1.09 EUR
84+ 0.86 EUR
95+ 0.76 EUR
108+ 0.66 EUR
115+ 0.63 EUR
Mindestbestellmenge: 66
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Technische Details FDS3590 ONSEMI

Description: MOSFET N-CH 80V 6.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Rds On (Max) @ Id, Vgs: 39mOhm @ 6.5A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 40 V.

Weitere Produktangebote FDS3590 nach Preis ab 0.63 EUR bis 2.18 EUR

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FDS3590 FDS3590 Hersteller : ONSEMI fds3590-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 6.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 86mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2129 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
66+1.09 EUR
84+ 0.86 EUR
95+ 0.76 EUR
108+ 0.66 EUR
115+ 0.63 EUR
Mindestbestellmenge: 66
FDS3590 FDS3590 Hersteller : onsemi fds3590-d.pdf Description: MOSFET N-CH 80V 6.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 6.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 40 V
auf Bestellung 2420 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.18 EUR
15+ 1.79 EUR
100+ 1.39 EUR
500+ 1.18 EUR
1000+ 0.96 EUR
Mindestbestellmenge: 12
FDS3590 FDS3590 Hersteller : onsemi / Fairchild FDS3590_D-2312964.pdf MOSFET SO-8 N-CH 80V
auf Bestellung 1914 Stücke:
Lieferzeit 14-28 Tag (e)
FDS3590 FDS3590 Hersteller : ON Semiconductor 3665492495461920fds3590.pdf Trans MOSFET N-CH 80V 6.5A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
FDS3590 FDS3590 Hersteller : ON Semiconductor 3665492495461920fds3590.pdf Trans MOSFET N-CH 80V 6.5A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
FDS3590 FDS3590 Hersteller : onsemi fds3590-d.pdf Description: MOSFET N-CH 80V 6.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 6.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 40 V
Produkt ist nicht verfügbar