FDS4480 ONSEMI
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10.8A
Pulsed drain current: 45A
Power dissipation: 2.5W
Case: SO8
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10.8A
Pulsed drain current: 45A
Power dissipation: 2.5W
Case: SO8
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2455 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
59+ | 1.23 EUR |
66+ | 1.09 EUR |
87+ | 0.83 EUR |
91+ | 0.79 EUR |
500+ | 0.78 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDS4480 ONSEMI
Description: MOSFET N-CH 40V 10.8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), Rds On (Max) @ Id, Vgs: 12mOhm @ 10.8A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): +30V, -20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1686 pF @ 20 V.
Weitere Produktangebote FDS4480 nach Preis ab 0.71 EUR bis 2.6 EUR
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FDS4480 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 40V Drain current: 10.8A Pulsed drain current: 45A Power dissipation: 2.5W Case: SO8 On-state resistance: 21mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2455 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS4480 | Hersteller : onsemi / Fairchild | MOSFETs SO-8 |
auf Bestellung 9740 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS4480 | Hersteller : onsemi |
Description: MOSFET N-CH 40V 10.8A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 10.8A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): +30V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1686 pF @ 20 V |
auf Bestellung 1123 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS4480 | Hersteller : FAIRCHIL | 09+ SOP8 |
auf Bestellung 1455 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4480 | Hersteller : Fairchild |
auf Bestellung 4863 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4480 | Hersteller : FAIRCHILD | 07+ SO-8 |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4480 | Hersteller : FAIRCHILD | 09+ |
auf Bestellung 3018 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4480 | Hersteller : FAIRCHILD | SO-8 |
auf Bestellung 41000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4480 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 40V 10.8A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS4480 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 40V 10.8A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS4480 | Hersteller : onsemi |
Description: MOSFET N-CH 40V 10.8A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 10.8A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): +30V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1686 pF @ 20 V |
Produkt ist nicht verfügbar |