Produkte > ONSEMI / FAIRCHILD > FDS4559-F085
FDS4559-F085

FDS4559-F085 onsemi / Fairchild


FDS4559_F085_D-2312727.pdf Hersteller: onsemi / Fairchild
MOSFET 60V Complementary PowerTrench MOS
auf Bestellung 8150 Stücke:

Lieferzeit 14-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben

Technische Details FDS4559-F085 onsemi / Fairchild

Description: MOSFET N/P-CH 60V 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A, Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Grade: Automotive, Part Status: Obsolete, Qualification: AEC-Q101.

Weitere Produktangebote FDS4559-F085

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FDS4559-F085 FDS4559-F085 Hersteller : ON Semiconductor fds4559_f085-d.pdf Trans MOSFET N/P-CH 60V 4.5A/3.5A Automotive 8-Pin SOIC T/R
Produkt ist nicht verfügbar
FDS4559-F085 FDS4559-F085 Hersteller : onsemi fds4559_f085-d.pdf Description: MOSFET N/P-CH 60V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
Produkt ist nicht verfügbar
FDS4559-F085 FDS4559-F085 Hersteller : onsemi fds4559_f085-d.pdf Description: MOSFET N/P-CH 60V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
Produkt ist nicht verfügbar