FDS4672A ONSEMI
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2322 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
50+ | 1.44 EUR |
55+ | 1.3 EUR |
74+ | 0.97 EUR |
75+ | 0.96 EUR |
79+ | 0.92 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDS4672A ONSEMI
Description: MOSFET N-CH 40V 11A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 4.5V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4766 pF @ 20 V.
Weitere Produktangebote FDS4672A nach Preis ab 0.92 EUR bis 3.28 EUR
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FDS4672A | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 11A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 21mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2322 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS4672A | Hersteller : onsemi / Fairchild | MOSFET SO-8 |
auf Bestellung 4643 Stücke: Lieferzeit 14-28 Tag (e) |
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FDS4672A | Hersteller : ON Semiconductor | Trans MOSFET N-CH 40V 11A 8-Pin SOIC T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS4672A | Hersteller : ONSEMI |
Description: ONSEMI - FDS4672A - Leistungs-MOSFET, n-Kanal, 40 V, 11 A, 0.01 ohm, SOIC, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40 Dauer-Drainstrom Id: 11 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 2.5 Gate-Source-Schwellenspannung, max.: 1.2 Verlustleistung: 2.5 Bauform - Transistor: SOIC Anzahl der Pins: 8 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.01 Rds(on)-Prüfspannung: 4.5 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.01 SVHC: No SVHC (10-Jun-2022) |
Produkt ist nicht verfügbar |
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FDS4672A | Hersteller : ON Semiconductor | Trans MOSFET N-CH 40V 11A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS4672A | Hersteller : ON Semiconductor | Trans MOSFET N-CH 40V 11A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS4672A | Hersteller : onsemi |
Description: MOSFET N-CH 40V 11A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4766 pF @ 20 V |
Produkt ist nicht verfügbar |
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FDS4672A | Hersteller : Fairchild Semiconductor |
Description: SMALL SIGNAL FIELD-EFFECT TRANSI Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4766 pF @ 20 V |
Produkt ist nicht verfügbar |
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FDS4672A | Hersteller : onsemi |
Description: MOSFET N-CH 40V 11A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4766 pF @ 20 V |
Produkt ist nicht verfügbar |