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FDS5170N7 FAIRCHILD


FDS5170N7.pdf Hersteller: FAIRCHILD
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Technische Details FDS5170N7 FAIRCHILD

Description: MOSFET N-CH 60V 10.6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), Rds On (Max) @ Id, Vgs: 12mOhm @ 10.6A, 10V, Power Dissipation (Max): 3W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2889 pF @ 30 V.

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FDS5170N7 Hersteller : FAIRCHILD FDS5170N7.pdf SO-8
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FDS5170N7 FDS5170N7 Hersteller : onsemi FDS5170N7.pdf Description: MOSFET N-CH 60V 10.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10.6A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2889 pF @ 30 V
Produkt ist nicht verfügbar
FDS5170N7 FDS5170N7 Hersteller : onsemi FDS5170N7.pdf Description: MOSFET N-CH 60V 10.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10.6A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2889 pF @ 30 V
Produkt ist nicht verfügbar