Technische Details FDS6609A FAIR
Description: MOSFET P-CH 30V 6.3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 15 V.
Weitere Produktangebote FDS6609A
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| FDS6609A | Hersteller : FAIRCHIL |
 0330+ SOP8 |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDS6609A | Hersteller : FAIRCHILD |
09+ |
auf Bestellung 218 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDS6609A | Hersteller : FAIRCHILD |
SO-8 |
auf Bestellung 41000 Stücke: Lieferzeit 21-28 Tag (e) |
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 |
FDS6609A | Hersteller : onsemi |
Description: MOSFET P-CH 30V 6.3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 15 V |
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