FDS6614A Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 30V 9.3A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 15 V
Description: MOSFET N-CH 30V 9.3A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 15 V
auf Bestellung 25863 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
310+ | 2.33 EUR |
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Technische Details FDS6614A Fairchild Semiconductor
Description: MOSFET N-CH 30V 9.3A 8SOIC, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 15 V.
Weitere Produktangebote FDS6614A
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
FDS6614A | Hersteller : ONSEMI |
Description: ONSEMI - FDS6614A - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 25863 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS6614A | Hersteller : FAIRCHIL | 09+ SOP8 |
auf Bestellung 1227 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS6614A | Hersteller : Fairchild |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS6614A | Hersteller : FAIRCHILD | 07+ SO-8 |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS6614A | Hersteller : FAIRCHILD | 09+ |
auf Bestellung 1018 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS6614A | Hersteller : FAIRCHILD | SO-8 |
auf Bestellung 41000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS6614A | Hersteller : ON Semiconductor | Trans MOSFET N-CH 30V 9.3A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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FDS6614A | Hersteller : onsemi |
Description: MOSFET N-CH 30V 9.3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 15 V |
Produkt ist nicht verfügbar |
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FDS6614A | Hersteller : onsemi / Fairchild | MOSFET SO-8 N-CH 30V |
Produkt ist nicht verfügbar |