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FDS6630A

FDS6630A Fairchild Semiconductor

FAIRS16168-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 30V 6.5A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 6.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V
auf Bestellung 43435 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1157+0.62 EUR
Mindestbestellmenge: 1157
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Technische Details FDS6630A Fairchild Semiconductor

Description: MOSFET N-CH 30V 6.5A 8SOIC, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Rds On (Max) @ Id, Vgs: 38mOhm @ 6.5A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V.

Weitere Produktangebote FDS6630A nach Preis ab 1.2 EUR bis 1.2 EUR

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Preis ohne MwSt
FDS6630A Hersteller : Fairchild FAIRS16168-1.pdf?t.download=true&u=5oefqw fds6630a-d.pdf Transistor N-Channel MOSFET; 30V; 20V; 60mOhm; 6,5A; 2,5W; -55°C ~ 150°C; FDS6630A TFDS6630a
Anzahl je Verpackung: 25 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
25+1.2 EUR
Mindestbestellmenge: 25
FDS6630A FDS6630A Hersteller : ON Semiconductor 3674627824201826fds6630a.pdf Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
FDS6630A FDS6630A Hersteller : onsemi fds6630a-d.pdf Description: MOSFET N-CH 30V 6.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 6.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V
Produkt ist nicht verfügbar
FDS6630A FDS6630A Hersteller : onsemi fds6630a-d.pdf Description: MOSFET N-CH 30V 6.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 6.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V
Produkt ist nicht verfügbar
FDS6630A FDS6630A Hersteller : onsemi / Fairchild FDS6630A_D-1809066.pdf MOSFET SO-8 N-CH 30V
Produkt ist nicht verfügbar