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FDS6675A FAIRCHILD


FDS6675A.pdf Hersteller: FAIRCHILD
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auf Bestellung 2018 Stücke:

Lieferzeit 21-28 Tag (e)
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Technische Details FDS6675A FAIRCHILD

Description: MOSFET P-CH 30V 11A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V.

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FDS6675A Hersteller : FAIRCHILD FDS6675A.pdf SO-8
auf Bestellung 41000 Stücke:
Lieferzeit 21-28 Tag (e)
FDS6675A FDS6675A Hersteller : onsemi FDS6675A.pdf Description: MOSFET P-CH 30V 11A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V
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FDS6675A FDS6675A Hersteller : onsemi / Fairchild FDS6675A.pdf MOSFET 30V P-Ch PowerTrench
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