auf Bestellung 434 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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340+ | 0.47 EUR |
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Technische Details FDS6676AS ON Semiconductor
Description: SMALL SIGNAL FIELD-EFFECT TRANSI, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), Rds On (Max) @ Id, Vgs: 6mOhm @ 14.5A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 15 V.
Weitere Produktangebote FDS6676AS nach Preis ab 1.27 EUR bis 1.27 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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FDS6676AS | Hersteller : Fairchild Semiconductor |
Description: SMALL SIGNAL FIELD-EFFECT TRANSI Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 14.5A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 15 V |
auf Bestellung 5369 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS6676AS | Hersteller : ON Semiconductor | Trans MOSFET N-CH 30V 14.5A 8-Pin SOIC T/R |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS6676AS | Hersteller : ON Semiconductor | Trans MOSFET N-CH 30V 14.5A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS6676AS | Hersteller : ON Semiconductor | Trans MOSFET N-CH 30V 14.5A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS6676AS | Hersteller : onsemi |
Description: MOSFET N-CH 30V 14.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 14.5A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 15 V |
Produkt ist nicht verfügbar |
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FDS6676AS | Hersteller : onsemi |
Description: MOSFET N-CH 30V 14.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 14.5A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 15 V |
Produkt ist nicht verfügbar |
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FDS6676AS | Hersteller : onsemi / Fairchild | MOSFET 30V NCH POWER TRENCH MOSFET |
Produkt ist nicht verfügbar |