auf Bestellung 1250 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 203+ | 0.77 EUR |
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Technische Details FDS86242 ON Semiconductor
Description: MOSFET N-CH 150V 4.1A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), Rds On (Max) @ Id, Vgs: 67mOhm @ 4.1A, 10V, Power Dissipation (Max): 2.5W (Ta), 5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 75 V.
Weitere Produktangebote FDS86242 nach Preis ab 1 EUR bis 2.65 EUR
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FDS86242 | Hersteller : onsemi |
 Description: MOSFET N-CH 150V 4.1A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 4.1A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 75 V |
auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS86242 | Hersteller : onsemi |
Description: MOSFET N-CH 150V 4.1A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 4.1A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 75 V |
auf Bestellung 26614 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS86242 | Hersteller : onsemi / Fairchild |
MOSFET 150V N-Channel PowerTrench MOSFET |
auf Bestellung 45614 Stücke: Lieferzeit 14-28 Tag (e) |
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FDS86242 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 4.1A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS86242 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 4.1A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS86242 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 4.1A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS86242 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 4.1A; 5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 4.1A Power dissipation: 5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 126mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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FDS86242 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 4.1A; 5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 4.1A Power dissipation: 5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 126mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |