FDS89161LZ onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 100V 2.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 302pF @ 50V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.43 EUR |
| 5000+ | 1.36 EUR |
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Technische Details FDS89161LZ onsemi
Description: MOSFET 2N-CH 100V 2.7A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.6W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 2.7A, Input Capacitance (Ciss) (Max) @ Vds: 302pF @ 50V, Rds On (Max) @ Id, Vgs: 105mOhm @ 2.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote FDS89161LZ nach Preis ab 1.51 EUR bis 3.51 EUR
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FDS89161LZ | Hersteller : onsemi |
Description: MOSFET 2N-CH 100V 2.7A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.7A Input Capacitance (Ciss) (Max) @ Vds: 302pF @ 50V Rds On (Max) @ Id, Vgs: 105mOhm @ 2.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 8587 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS89161LZ | Hersteller : onsemi / Fairchild |
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FDS89161LZ | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Power dissipation: 31W Case: SO8 Gate-source voltage: ±20V On-state resistance: 182mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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FDS89161LZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 2.7A 8-Pin SOIC T/R |
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FDS89161LZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 2.7A 8-Pin SOIC T/R |
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FDS89161LZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 2.7A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS89161LZ | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Power dissipation: 31W Case: SO8 Gate-source voltage: ±20V On-state resistance: 182mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |