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FDS8958A-F085

FDS8958A-F085 onsemi / Fairchild


FDS8958A_F085_D-2312974.pdf Hersteller: onsemi / Fairchild
MOSFET SO8DUAL NCH & PCH POWER TRENCH MOSFET
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Technische Details FDS8958A-F085 onsemi / Fairchild

Description: MOSFET N/P-CH 30V 7A/5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7A, 5A, Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V, Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete, Grade: Automotive, Qualification: AEC-Q101.

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FDS8958A-F085 FDS8958A-F085 Hersteller : ON Semiconductor fds8958a_f085-d.pdf Trans MOSFET N/P-CH 30V 7A/5A Automotive 8-Pin SOIC T/R
Produkt ist nicht verfügbar
FDS8958A-F085 FDS8958A-F085 Hersteller : onsemi fds8958a_f085-d.pdf Description: MOSFET N/P-CH 30V 7A/5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
FDS8958A-F085 FDS8958A-F085 Hersteller : onsemi fds8958a_f085-d.pdf Description: MOSFET N/P-CH 30V 7A/5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar