FDS8960C

FDS8960C ON Semiconductor / Fairchild


FDS8960C-1305847.pdf Hersteller: ON Semiconductor / Fairchild
MOSFET 35V Dual N & P-Chl PwrTrnch #174 MOSFET
auf Bestellung 3494 Stücke:

Lieferzeit 14-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben

Technische Details FDS8960C ON Semiconductor / Fairchild

Description: MOSFET N/P-CH 35V 7A/5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 35V, Current - Continuous Drain (Id) @ 25°C: 7A, 5A, Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V, Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete.

Weitere Produktangebote FDS8960C

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FDS8960C Hersteller : FAIRCHIL ONSM-S-A0003584329-1.pdf?t.download=true&u=5oefqw FDS8960C.pdf 09+ SOP8
auf Bestellung 1395 Stücke:
Lieferzeit 21-28 Tag (e)
FDS8960C Hersteller : Fairchild ONSM-S-A0003584329-1.pdf?t.download=true&u=5oefqw FDS8960C.pdf
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
FDS8960C Hersteller : FDS ONSM-S-A0003584329-1.pdf?t.download=true&u=5oefqw FDS8960C.pdf 07+/08+ SOP8
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
FDS8960C FDS8960C Hersteller : ON Semiconductor fds8960cjp-d.pdf Trans MOSFET N/P-CH 35V 7A/5A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
FDS8960C FDS8960C Hersteller : onsemi ONSM-S-A0003584329-1.pdf?t.download=true&u=5oefqw Description: DUAL N & P-CHANNEL POWERTRENCH M
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
FDS8960C FDS8960C Hersteller : onsemi FDS8960C.pdf Description: MOSFET N/P-CH 35V 7A/5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 7A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
FDS8960C FDS8960C Hersteller : onsemi FDS8960C.pdf Description: MOSFET N/P-CH 35V 7A/5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 7A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar