Technische Details FDS8962C FAIRCHIL
Description: MOSFET N/P-CH 30V 7A/5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7A, 5A, Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V, Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete.
Weitere Produktangebote FDS8962C
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| FDS8962C | Hersteller : FAIRCHILD |
 SO-8 |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDS8962C | Hersteller : FDS |
07+/08+ SOP8 |
auf Bestellung 200 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS8962C | Hersteller : ON Semiconductor |
Trans MOSFET N/P-CH 30V 7A/5A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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FDS8962C | Hersteller : onsemi |
Description: MOSFET N/P-CH 30V 7A/5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 5A Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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FDS8962C | Hersteller : onsemi |
Description: MOSFET N/P-CH 30V 7A/5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 5A Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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FDS8962C | Hersteller : onsemi / Fairchild |
MOSFET SO8 DUAL NCH & PCH POWER TRENCH MOSFET |
Produkt ist nicht verfügbar |