FDS9934C ON Semiconductor
auf Bestellung 87500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.52 EUR |
| 5000+ | 0.49 EUR |
| 12500+ | 0.45 EUR |
| 25000+ | 0.43 EUR |
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Technische Details FDS9934C ON Semiconductor
Description: MOSFET N/P-CH 20V 6.5A/5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6.5A, 5A, Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V, Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote FDS9934C nach Preis ab 0.37 EUR bis 2 EUR
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FDS9934C | Hersteller : ON Semiconductor |
 Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC T/R |
auf Bestellung 87500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9934C | Hersteller : onsemi |
Description: MOSFET N/P-CH 20V 6.5A/5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A, 5A Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS9934C | Hersteller : ON Semiconductor |
Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC T/R |
auf Bestellung 220000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9934C | Hersteller : ON Semiconductor |
Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC T/R |
auf Bestellung 705 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9934C | Hersteller : ON Semiconductor |
Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC T/R |
auf Bestellung 705 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9934C | Hersteller : onsemi / Fairchild |
MOSFET 20V Complementary PowerTrench |
auf Bestellung 19163 Stücke: Lieferzeit 14-28 Tag (e) |
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FDS9934C | Hersteller : onsemi |
Description: MOSFET N/P-CH 20V 6.5A/5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A, 5A Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 5221 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS9934C | Hersteller : ON Semiconductor |
Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC T/R |
auf Bestellung 87500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9934C | Hersteller : ON Semiconductor |
Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS9934C | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Technology: PowerTrench® Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 6.5/-5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12/±10V On-state resistance: 50/90mΩ Mounting: SMD Gate charge: 9/12nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDS9934C | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Technology: PowerTrench® Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 6.5/-5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12/±10V On-state resistance: 50/90mΩ Mounting: SMD Gate charge: 9/12nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |