FDT434P Fairchild/ON Semiconductor
Hersteller: Fairchild/ON Semiconductor
P-канальний ПТ; Udss, В = 20; Id = 6 А; Ciss, пФ @ Uds, В = 1187 @ 10; Qg, нКл = 19 @ 4,5 В; Rds = 50 мОм @ 6 A, 4,5 В; Ugs(th) = 1 В @ 250 мкА; Р, Вт = 3 Вт; Тексп, °C = -55...+150; Тип монт. = smd; SOT-223
P-канальний ПТ; Udss, В = 20; Id = 6 А; Ciss, пФ @ Uds, В = 1187 @ 10; Qg, нКл = 19 @ 4,5 В; Rds = 50 мОм @ 6 A, 4,5 В; Ugs(th) = 1 В @ 250 мкА; Р, Вт = 3 Вт; Тексп, °C = -55...+150; Тип монт. = smd; SOT-223
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
12+ | 0.57 EUR |
13+ | 0.49 EUR |
100+ | 0.43 EUR |
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Technische Details FDT434P Fairchild/ON Semiconductor
Description: MOSFET P-CH 20V 6A SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 4.5V, Power Dissipation (Max): 3W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-223-4, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1187 pF @ 10 V.
Weitere Produktangebote FDT434P
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FDT434P | Hersteller : ON Semiconductor | Trans MOSFET P-CH 20V 6A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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FDT434P | Hersteller : ON Semiconductor | Trans MOSFET P-CH 20V 6A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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FDT434P | Hersteller : onsemi |
Description: MOSFET P-CH 20V 6A SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 4.5V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1187 pF @ 10 V |
Produkt ist nicht verfügbar |
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FDT434P | Hersteller : onsemi |
Description: MOSFET P-CH 20V 6A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 4.5V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1187 pF @ 10 V |
Produkt ist nicht verfügbar |
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FDT434P | Hersteller : onsemi / Fairchild | MOSFET SOT-223 P-CH -20V |
Produkt ist nicht verfügbar |