FDT457N onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 5A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 15 V
Description: MOSFET N-CH 30V 5A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 15 V
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.95 EUR |
8000+ | 0.91 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDT457N onsemi
Description: MOSFET N-CH 30V 5A SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V, Power Dissipation (Max): 3W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 15 V.
Weitere Produktangebote FDT457N nach Preis ab 0.95 EUR bis 2.31 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FDT457N | Hersteller : onsemi |
Description: MOSFET N-CH 30V 5A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 15 V |
auf Bestellung 15499 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||
FDT457N | Hersteller : ONSEMI |
Description: ONSEMI - FDT457N - Leistungs-MOSFET, n-Kanal, 30 V, 5 A, 0.06 ohm, SOT-223, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: -888 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 3W Anzahl der Pins: 4Pin(s) Produktpalette: -888 productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.06ohm |
auf Bestellung 26373 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
FDT457N | Hersteller : ON Semiconductor / Fairchild | MOSFET SOT-223 N-CH 30V |
auf Bestellung 24000 Stücke: Lieferzeit 14-28 Tag (e) |
||||||||||||||||
FDT457N | Hersteller : ONSEMI |
Description: ONSEMI - FDT457N - Leistungs-MOSFET, n-Kanal, 30 V, 5 A, 0.06 ohm, SOT-223, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: -888 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 3W Anzahl der Pins: 4Pin(s) Produktpalette: -888 productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.06ohm |
auf Bestellung 26373 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
FDT457N | Hersteller : ON Semiconductor | Trans MOSFET N-CH 30V 5A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
FDT457N | Hersteller : ON Semiconductor | Trans MOSFET N-CH 30V 5A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
||||||||||||||||
FDT457N | Hersteller : ON Semiconductor | Trans MOSFET N-CH 30V 5A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |