FDZ208P Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET P-CH 30V 12.5A 30BGA
Packaging: Bulk
Package / Case: 30-WFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 30-BGA (4x3.5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2409 pF @ 15 V
auf Bestellung 5403 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 224+ | 3.27 EUR |
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Technische Details FDZ208P Fairchild Semiconductor
Description: MOSFET P-CH 30V 12.5A 30BGA, Packaging: Bulk, Package / Case: 30-WFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.5A, 10V, Power Dissipation (Max): 2.2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 30-BGA (4x3.5), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2409 pF @ 15 V.