FEPB16DT-E3/45 Vishay General Semiconductor
auf Bestellung 752 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
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13+ | 4.11 EUR |
14+ | 3.72 EUR |
100+ | 2.99 EUR |
500+ | 2.44 EUR |
1000+ | 1.91 EUR |
2000+ | 1.85 EUR |
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Technische Details FEPB16DT-E3/45 Vishay General Semiconductor
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 0.95V; tube, Type of diode: rectifying, Mounting: SMD, Max. off-state voltage: 200V, Load current: 8A x2, Reverse recovery time: 35ns, Semiconductor structure: common cathode; double, Features of semiconductor devices: glass passivated; ultrafast switching, Capacitance: 85pF, Case: D2PAK, Max. forward voltage: 0.95V, Max. forward impulse current: 200A, Leakage current: 500µA, Kind of package: tube.
Weitere Produktangebote FEPB16DT-E3/45
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FEPB16DT-E3/45 | Hersteller : Vishay General Semiconductor - Diodes Division | Description: DIODE ARRAY GP 200V 8A TO263AB |
auf Bestellung 509 Stücke: Lieferzeit 21-28 Tag (e) |
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FEPB16DT-E3/45 | Hersteller : Vishay | Rectifier Diode Switching 200V 16A 35ns 3-Pin(2+Tab) TO-263AB Tube |
Produkt ist nicht verfügbar |
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FEPB16DT-E3/45 | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 0.95V; tube Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A x2 Reverse recovery time: 35ns Semiconductor structure: common cathode; double Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 85pF Case: D2PAK Max. forward voltage: 0.95V Max. forward impulse current: 200A Leakage current: 500µA Kind of package: tube |
Produkt ist nicht verfügbar |