FES10G onsemi
Hersteller: onsemi
Description: DIODE GEN PURP 400V 10A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 10A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5000+ | 1.27 EUR |
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Technische Details FES10G onsemi
Description: DIODE GEN PURP 400V 10A TO277-3, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Capacitance @ Vr, F: 140pF @ 4V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-277-3, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A, Current - Reverse Leakage @ Vr: 5 µA @ 400 V.
Weitere Produktangebote FES10G nach Preis ab 1.27 EUR bis 3.28 EUR
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FES10G | Hersteller : Fairchild Semiconductor |
Description: DIODE GEN PURP 400V 10A TO277-3 Packaging: Bulk Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 140pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
auf Bestellung 370010 Stücke: Lieferzeit 21-28 Tag (e) |
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FES10G | Hersteller : onsemi |
Description: DIODE GEN PURP 400V 10A TO277-3 Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 140pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
auf Bestellung 8947 Stücke: Lieferzeit 21-28 Tag (e) |
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FES10G | Hersteller : onsemi / Fairchild | Rectifiers 10A 400V Ultra Fast |
auf Bestellung 4220 Stücke: Lieferzeit 14-28 Tag (e) |
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FES10G | Hersteller : ON Semiconductor | Rectifier Diode Switching 400V 10A 40ns 3-Pin(2+Tab) TO-277 T/R |
Produkt ist nicht verfügbar |
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FES10G | Hersteller : ON Semiconductor | Rectifier Diode Switching 400V 10A 40ns 3-Pin(2+Tab) TO-277 T/R |
Produkt ist nicht verfügbar |