FESB16DT-E3/45

FESB16DT-E3/45 Vishay General Semiconductor - Diodes Division


fes16jt.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 809 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.93 EUR
10+ 3.26 EUR
100+ 2.6 EUR
500+ 2.2 EUR
Mindestbestellmenge: 7
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Technische Details FESB16DT-E3/45 Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 200V 16A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 175pF @ 4V, 1MHz, Current - Average Rectified (Io): 16A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -65°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V.

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FESB16DT-E3/45 FESB16DT-E3/45 Hersteller : Vishay General Semiconductor fes16jt.pdf Rectifiers 16 Amp 200 Volt 35ns
auf Bestellung 9833 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
13+4 EUR
16+ 3.25 EUR
100+ 2.65 EUR
500+ 2.24 EUR
1000+ 1.9 EUR
2000+ 1.81 EUR
5000+ 1.75 EUR
Mindestbestellmenge: 13
FESB16DT-E3/45 Hersteller : VISHAY fes16x_fesf16x_fesb16x.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 16A; 35ns; D2PAK; Ufmax: 0.975V; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 16A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 175pF
Case: D2PAK
Max. forward voltage: 0.975V
Max. forward impulse current: 250A
Leakage current: 500µA
Kind of package: tube
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