FESB16JT-E3/45 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GEN PURP 600V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1121 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 4.11 EUR |
| 10+ | 3.41 EUR |
| 100+ | 2.72 EUR |
| 500+ | 2.3 EUR |
| 1000+ | 1.95 EUR |
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Technische Details FESB16JT-E3/45 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 16A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 145pF @ 4V, 1MHz, Current - Average Rectified (Io): 16A, Supplier Device Package: TO-263AB (D²PAK), Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Weitere Produktangebote FESB16JT-E3/45 nach Preis ab 1.81 EUR bis 4.16 EUR
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FESB16JT-E3/45 | Hersteller : Vishay General Semiconductor |
Rectifiers 16 Amp 600 Volt 50ns |
auf Bestellung 3076 Stücke: Lieferzeit 14-28 Tag (e) |
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FESB16JT-E3/45 | Hersteller : Vishay |
Rectifier Diode Switching 600V 16A 50ns 3-Pin(2+Tab) TO-263AB Tube |
Produkt ist nicht verfügbar |
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| FESB16JT-E3/45 | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 16A; 50ns; D2PAK; Ufmax: 1.5V; Ir: 500uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 600V Load current: 16A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 145pF Case: D2PAK Max. forward voltage: 1.5V Max. forward impulse current: 250A Leakage current: 500µA Kind of package: tube |
Produkt ist nicht verfügbar |