FF200R12KT3EHOSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 1050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Description: IGBT MODULE 1200V 1050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 41 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 360.83 EUR |
Produktrezensionen
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Technische Details FF200R12KT3EHOSA1 Infineon Technologies
Category: IGBT modules, Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2, Power dissipation: 1.05kW, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT x2, Case: AG-62MM-1, Max. off-state voltage: 1.2kV, Semiconductor structure: common emitter; transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 200A, Pulsed collector current: 400A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote FF200R12KT3EHOSA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FF200R12KT3EHOSA1 | Hersteller : Infineon Technologies | Trans IGBT Module N-CH 1200V 295A 1050000mW 7-Pin 62MM-1 Tray |
Produkt ist nicht verfügbar |
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FF200R12KT3EHOSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Power dissipation: 1.05kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT x2 Case: AG-62MM-1 Max. off-state voltage: 1.2kV Semiconductor structure: common emitter; transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
FF200R12KT3EHOSA1 | Hersteller : Infineon Technologies | Trans IGBT Module N-CH 1200V 295A 1050W 7-Pin 62MM-1 Tray |
Produkt ist nicht verfügbar |
||
FF200R12KT3EHOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MODULE 1200V 1050W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Module Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1050 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 14 nF @ 25 V |
Produkt ist nicht verfügbar |
||
FF200R12KT3EHOSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Power dissipation: 1.05kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT x2 Case: AG-62MM-1 Max. off-state voltage: 1.2kV Semiconductor structure: common emitter; transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A |
Produkt ist nicht verfügbar |