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FF200R12KT3EHOSA1

FF200R12KT3EHOSA1 Infineon Technologies


Infineon-FF200R12KT3_E-DS-v02_00-en_de.pdf?fileId=db3a30431441fb5d0114d51250e31b88 Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 1050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 41 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+360.83 EUR
Mindestbestellmenge: 3
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Technische Details FF200R12KT3EHOSA1 Infineon Technologies

Category: IGBT modules, Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2, Power dissipation: 1.05kW, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT x2, Case: AG-62MM-1, Max. off-state voltage: 1.2kV, Semiconductor structure: common emitter; transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 200A, Pulsed collector current: 400A, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote FF200R12KT3EHOSA1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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FF200R12KT3EHOSA1 FF200R12KT3EHOSA1 Hersteller : Infineon Technologies 7948ds_ff200r12kt3_3_0_de-en.pdffolderiddb3a304412b407950112b4095b060.pdf Trans IGBT Module N-CH 1200V 295A 1050000mW 7-Pin 62MM-1 Tray
Produkt ist nicht verfügbar
FF200R12KT3EHOSA1 FF200R12KT3EHOSA1 Hersteller : INFINEON TECHNOLOGIES FF200R12KT3E.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Power dissipation: 1.05kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT x2
Case: AG-62MM-1
Max. off-state voltage: 1.2kV
Semiconductor structure: common emitter; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FF200R12KT3EHOSA1 FF200R12KT3EHOSA1 Hersteller : Infineon Technologies 7948ds_ff200r12kt3_3_0_de-en.pdffolderiddb3a304412b407950112b4095b060.pdf Trans IGBT Module N-CH 1200V 295A 1050W 7-Pin 62MM-1 Tray
Produkt ist nicht verfügbar
FF200R12KT3EHOSA1 FF200R12KT3EHOSA1 Hersteller : Infineon Technologies Infineon-FF200R12KT3_E-DS-v02_00-en_de.pdf?fileId=db3a30431441fb5d0114d51250e31b88 Description: IGBT MODULE 1200V 1050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Produkt ist nicht verfügbar
FF200R12KT3EHOSA1 FF200R12KT3EHOSA1 Hersteller : INFINEON TECHNOLOGIES FF200R12KT3E.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Power dissipation: 1.05kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT x2
Case: AG-62MM-1
Max. off-state voltage: 1.2kV
Semiconductor structure: common emitter; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Produkt ist nicht verfügbar