FF200R17KE4HOSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: AG-62MM-1
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.25kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 239.81 EUR |
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Technische Details FF200R17KE4HOSA1 INFINEON TECHNOLOGIES
Description: IGBT MOD 1700V 310A 1250W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 310 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 1250 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 18 nF @ 25 V.
Weitere Produktangebote FF200R17KE4HOSA1 nach Preis ab 239.81 EUR bis 390.57 EUR
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FF200R17KE4HOSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Case: AG-62MM-1 Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Power dissipation: 1.25kW Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Max. off-state voltage: 1.7kV |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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FF200R17KE4HOSA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1700V 310A 1250W 7-Pin 62MM-1 Tray |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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FF200R17KE4HOSA1 | Hersteller : Infineon Technologies |
IGBT Modules MEDIUM POWER 62MM |
auf Bestellung 19 Stücke: Lieferzeit 14-28 Tag (e) |
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FF200R17KE4HOSA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1700V 310A 1250000mW 7-Pin 62MM-1 Tray |
Produkt ist nicht verfügbar |
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FF200R17KE4HOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1700V 310A 1250W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 310 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 1250 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 18 nF @ 25 V |
Produkt ist nicht verfügbar |