FF23MR12W1M1B11BOMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: SIC 2N-CH 1200V 50A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 800V
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 20mA
Supplier Device Package: Module
auf Bestellung 254 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 232.62 EUR |
| 24+ | 212.37 EUR |
| 48+ | 202.62 EUR |
| 96+ | 192.11 EUR |
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Technische Details FF23MR12W1M1B11BOMA1 Infineon Technologies
Description: SIC 2N-CH 1200V 50A MODULE, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 50A, Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 800V, Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 15V, Gate Charge (Qg) (Max) @ Vgs: 125nC @ 15V, Vgs(th) (Max) @ Id: 5.55V @ 20mA, Supplier Device Package: Module.
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