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FF300R12ME4BOSA1

FF300R12ME4BOSA1 Infineon Technologies


3663ds_ff300r12me4_3_1_ja-en.pdffolderiddb3a30433db6f09f013dca0fd1e35.pdf Hersteller: Infineon Technologies
Trans IGBT Module N-CH 1200V 450A 1600000mW 11-Pin ECONOD-3 Tray
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Technische Details FF300R12ME4BOSA1 Infineon Technologies

Description: IGBT MOD 1200V 450A 1600W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 450 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1600 W, Current - Collector Cutoff (Max): 3 mA, Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V.

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FF300R12ME4BOSA1 FF300R12ME4BOSA1 Hersteller : Infineon Technologies Infineon-FF300R12ME4-DS-v03_01-en_de.pdf?fileId=db3a30431a5c32f2011a76a01c216c55 Description: IGBT MOD 1200V 450A 1600W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1600 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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