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FF600R12ME4EB11BOSA1

FF600R12ME4EB11BOSA1 Infineon Technologies


Infineon-FF600R12ME4E_B11-DS-v03_00-EN.pdf?fileId=5546d462602a9dc80160307d5ba65c8a Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 995A 4050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 995 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 4050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
auf Bestellung 5 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+577.33 EUR
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Technische Details FF600R12ME4EB11BOSA1 Infineon Technologies

Description: IGBT MOD 1200V 995A 4050W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 995 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 4050 W, Current - Collector Cutoff (Max): 3 mA, Input Capacitance (Cies) @ Vce: 37 nF @ 25 V.

Weitere Produktangebote FF600R12ME4EB11BOSA1 nach Preis ab 581.48 EUR bis 581.48 EUR

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FF600R12ME4EB11BOSA1 FF600R12ME4EB11BOSA1 Hersteller : Infineon Technologies Infineon-FF600R12ME4E_B11-DS-v03_00-EN.pdf?fileId=5546d462602a9dc80160307d5ba65c8a Description: IGBT MOD 1200V 995A 4050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 995 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 4050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
auf Bestellung 1336 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+581.48 EUR
Mindestbestellmenge: 2
FF600R12ME4EB11BOSA1 FF600R12ME4EB11BOSA1 Hersteller : Infineon Technologies Infineon-FF600R12ME4E_B11-DS-v03_00-EN-1274286.pdf IGBT Modules MEDIUM POWER ECONO
auf Bestellung 36 Stücke:
Lieferzeit 14-28 Tag (e)
FF600R12ME4EB11BOSA1 Hersteller : INFINEON TECHNOLOGIES FF600R12ME4EB11.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Case: AG-ECONOD-6
Pulsed collector current: 1.2kA
Collector current: 600A
Gate-emitter voltage: ±20V
Semiconductor structure: common emitter; transistor/transistor
Technology: EconoDUAL™ 3
Topology: IGBT x2; NTC thermistor
Max. off-state voltage: 1.2kV
Application: for UPS; Inverter; motors; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
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