auf Bestellung 18 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 5.25 EUR |
| 11+ | 4.73 EUR |
| 25+ | 4.47 EUR |
| 100+ | 3.8 EUR |
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Technische Details FGA15S125P onsemi / Fairchild
Description: INSULATED GATE BIPOLAR TRANSISTO, Packaging: Bulk, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.72V @ 15V, 15A, Supplier Device Package: TO-3P, IGBT Type: Trench, Gate Charge: 129 nC, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 1250 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 136 W.
Weitere Produktangebote FGA15S125P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FGA15S125P | Hersteller : ON Semiconductor |
 Trans IGBT Chip N-CH 1250V 30A 136000mW 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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FGA15S125P | Hersteller : Fairchild Semiconductor |
Description: INSULATED GATE BIPOLAR TRANSISTO Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.72V @ 15V, 15A Supplier Device Package: TO-3P IGBT Type: Trench Gate Charge: 129 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1250 V Current - Collector Pulsed (Icm): 45 A Power - Max: 136 W |
Produkt ist nicht verfügbar |
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FGA15S125P | Hersteller : onsemi |
Description: IGBT TRENCH 1250V 30A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.72V @ 15V, 15A Supplier Device Package: TO-3P IGBT Type: Trench Gate Charge: 129 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1250 V Current - Collector Pulsed (Icm): 45 A Power - Max: 136 W |
Produkt ist nicht verfügbar |