FGA25N120ANTDTU ONSEMI
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 125W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 125W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 125W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 125W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 594 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
15+ | 4.89 EUR |
17+ | 4.4 EUR |
23+ | 3.2 EUR |
24+ | 3.03 EUR |
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Technische Details FGA25N120ANTDTU ONSEMI
Description: IGBT NPT/TRENCH 1200V 50A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 350 ns, Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 50A, Supplier Device Package: TO-3P, IGBT Type: NPT and Trench, Td (on/off) @ 25°C: 50ns/190ns, Switching Energy: 4.1mJ (on), 960µJ (off), Test Condition: 600V, 25A, 10Ohm, 15V, Gate Charge: 200 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 312 W.
Weitere Produktangebote FGA25N120ANTDTU
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
FGA25N120ANTDTU | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 1200V 50A 312W 3-Pin(3+Tab) TO-3PN Rail |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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FGA25N120ANTDTU | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 1200V 50A 312000mW 3-Pin(3+Tab) TO-3PN Rail |
Produkt ist nicht verfügbar |
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FGA25N120ANTDTU | Hersteller : ONSEMI |
Description: ONSEMI - FGA25N120ANTDTU - IGBT, 25 A, 2.5 V, 312 W, 1.2 kV, TO-3P, 3 Pin(s) Kollektor-Emitter-Sättigungsspannung Vce(on): 2.5 DC-Kollektorstrom: 25 Anzahl der Pins: 3 Bauform - Transistor: TO-3P Kollektor-Emitter-Spannung V(br)ceo: 1.2 Verlustleistung Pd: 312 Betriebstemperatur, max.: 150 Produktpalette: - SVHC: Lead (17-Jan-2022) |
Produkt ist nicht verfügbar |
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FGA25N120ANTDTU | Hersteller : onsemi |
Description: IGBT NPT/TRENCH 1200V 50A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 350 ns Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 50A Supplier Device Package: TO-3P IGBT Type: NPT and Trench Td (on/off) @ 25°C: 50ns/190ns Switching Energy: 4.1mJ (on), 960µJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 200 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 90 A Power - Max: 312 W |
Produkt ist nicht verfügbar |
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FGA25N120ANTDTU | Hersteller : onsemi / Fairchild | IGBT Transistors Copak Discrete |
Produkt ist nicht verfügbar |