FGA30N60LSDTU Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/250ns
Switching Energy: 1.1mJ (on), 21mJ (off)
Test Condition: 400V, 30A, 6.8Ohm, 15V
Gate Charge: 225 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 480 W
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/250ns
Switching Energy: 1.1mJ (on), 21mJ (off)
Test Condition: 400V, 30A, 6.8Ohm, 15V
Gate Charge: 225 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 480 W
auf Bestellung 551 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
104+ | 6.96 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FGA30N60LSDTU Fairchild Semiconductor
Description: INSULATED GATE BIPOLAR TRANSISTO, Packaging: Bulk, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 35 ns, Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A, Supplier Device Package: TO-3P, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/250ns, Switching Energy: 1.1mJ (on), 21mJ (off), Test Condition: 400V, 30A, 6.8Ohm, 15V, Gate Charge: 225 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 480 W.
Weitere Produktangebote FGA30N60LSDTU nach Preis ab 5.82 EUR bis 11.86 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FGA30N60LSDTU | Hersteller : onsemi / Fairchild | IGBT Transistors 30A 600V N-Ch Planar |
auf Bestellung 697 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
FGA30N60LSDTU | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 600V 60A 480W 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
FGA30N60LSDTU | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 600V 60A 480W 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
FGA30N60LSDTU | Hersteller : ONSEMI |
Description: ONSEMI - FGA30N60LSDTU - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: NO euEccn: NLR hazardous: false rohsPhthalatesCompliant: NO usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 551 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
FGA30N60LSDTU | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 600V 60A 480000mW 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
||||||||||||||||||
FGA30N60LSDTU | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 600V 60A 480000mW 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |