Produkte > ON SEMICONDUCTOR > FGB20N60SFD
FGB20N60SFD

FGB20N60SFD ON Semiconductor


3665971436141213fgb20n60sfd.pdf Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 600V 40A 208000mW 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details FGB20N60SFD ON Semiconductor

Description: IGBT 600V 40A 208W D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 34 ns, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A, Supplier Device Package: TO-263 (D2Pak), IGBT Type: Field Stop, Td (on/off) @ 25°C: 13ns/90ns, Switching Energy: 370µJ (on), 160µJ (off), Test Condition: 400V, 20A, 10Ohm, 15V, Gate Charge: 65 nC, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 208 W.

Weitere Produktangebote FGB20N60SFD

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FGB20N60SFD FGB20N60SFD Hersteller : onsemi fgb20n60sfd-d.pdf Description: IGBT 600V 40A 208W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Field Stop
Td (on/off) @ 25°C: 13ns/90ns
Switching Energy: 370µJ (on), 160µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 208 W
Produkt ist nicht verfügbar
FGB20N60SFD FGB20N60SFD Hersteller : onsemi / Fairchild FGB20N60SFD_D-2313527.pdf IGBT Transistors 600V 20A Field Stop
Produkt ist nicht verfügbar