Technische Details FGD2736G3-F085V ON Semiconductor
Category: SMD IGBT transistors, Description: Transistor: IGBT; 360V; 24.3A; 150W; DPAK; ignition systems, Type of transistor: IGBT, Collector-emitter voltage: 360V, Collector current: 24.3A, Power dissipation: 150W, Case: DPAK, Gate-emitter voltage: ±10V, Mounting: SMD, Gate charge: 18nC, Kind of package: reel; tape, Features of semiconductor devices: ESD protected gate; logic level, Application: ignition systems, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote FGD2736G3-F085V
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| FGD2736G3-F085V | Hersteller : ONSEMI |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; 360V; 24.3A; 150W; DPAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 360V Collector current: 24.3A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; logic level Application: ignition systems Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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FGD2736G3-F085V | Hersteller : onsemi | Description: IGBT ECOSPARK1 IGN TO252 |
Produkt ist nicht verfügbar |
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FGD2736G3-F085V | Hersteller : onsemi |
IGBT Transistors ECOSPARK1 IGN IGBT |
Produkt ist nicht verfügbar |
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| FGD2736G3-F085V | Hersteller : ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 360V; 24.3A; 150W; DPAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 360V Collector current: 24.3A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; logic level Application: ignition systems |
Produkt ist nicht verfügbar |