FGD3N60UNDF ON Semiconductor
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Technische Details FGD3N60UNDF ON Semiconductor
Description: IGBT 600V 6A 60W DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 21 ns, Vce(on) (Max) @ Vge, Ic: 2.52V @ 15V, 3A, Supplier Device Package: TO-252AA, IGBT Type: NPT, Td (on/off) @ 25°C: 5.5ns/22ns, Switching Energy: 52µJ (on), 30µJ (off), Test Condition: 400V, 3A, 10Ohm, 15V, Gate Charge: 1.6 nC, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 9 A, Power - Max: 60 W.
Weitere Produktangebote FGD3N60UNDF
Foto | Bezeichnung | Hersteller | Beschreibung |
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FGD3N60UNDF | Hersteller : onsemi |
Description: IGBT 600V 6A 60W DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 21 ns Vce(on) (Max) @ Vge, Ic: 2.52V @ 15V, 3A Supplier Device Package: TO-252AA IGBT Type: NPT Td (on/off) @ 25°C: 5.5ns/22ns Switching Energy: 52µJ (on), 30µJ (off) Test Condition: 400V, 3A, 10Ohm, 15V Gate Charge: 1.6 nC Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 9 A Power - Max: 60 W |
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FGD3N60UNDF | Hersteller : onsemi / Fairchild | IGBT Transistors 600V, 3A Short Circuit Rated IGBT |
Produkt ist nicht verfügbar |