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FGD3N60UNDF

FGD3N60UNDF ON Semiconductor


4264481552237320fgd3n60undf-d.pdf Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 600V 6A 60000mW 3-Pin(2+Tab) DPAK T/R
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Technische Details FGD3N60UNDF ON Semiconductor

Description: IGBT 600V 6A 60W DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 21 ns, Vce(on) (Max) @ Vge, Ic: 2.52V @ 15V, 3A, Supplier Device Package: TO-252AA, IGBT Type: NPT, Td (on/off) @ 25°C: 5.5ns/22ns, Switching Energy: 52µJ (on), 30µJ (off), Test Condition: 400V, 3A, 10Ohm, 15V, Gate Charge: 1.6 nC, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 9 A, Power - Max: 60 W.

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FGD3N60UNDF FGD3N60UNDF Hersteller : onsemi fgd3n60undf-d.pdf Description: IGBT 600V 6A 60W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 21 ns
Vce(on) (Max) @ Vge, Ic: 2.52V @ 15V, 3A
Supplier Device Package: TO-252AA
IGBT Type: NPT
Td (on/off) @ 25°C: 5.5ns/22ns
Switching Energy: 52µJ (on), 30µJ (off)
Test Condition: 400V, 3A, 10Ohm, 15V
Gate Charge: 1.6 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 60 W
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FGD3N60UNDF FGD3N60UNDF Hersteller : onsemi / Fairchild FGD3N60UNDF_D-1809374.pdf IGBT Transistors 600V, 3A Short Circuit Rated IGBT
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