FGD5T120SH onsemi / Fairchild
auf Bestellung 23857 Stücke:
Lieferzeit 1243-1257 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 3.82 EUR |
| 17+ | 3.17 EUR |
| 100+ | 2.51 EUR |
| 250+ | 2.34 EUR |
| 500+ | 2.12 EUR |
| 1000+ | 1.82 EUR |
| 2500+ | 1.73 EUR |
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Technische Details FGD5T120SH onsemi / Fairchild
Description: IGBT 1200V 5A FS3 DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 5A, Supplier Device Package: TO-252AA, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 4.8ns/24.8ns, Switching Energy: 247µJ (on), 94µJ (off), Test Condition: 600V, 5A, 30Ohm, 15V, Gate Charge: 6.7 nC, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 12.5 A, Power - Max: 69 W.
Weitere Produktangebote FGD5T120SH
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FGD5T120SH | Hersteller : ON Semiconductor |
 Trans IGBT Chip N-CH 1200V 10A 69000mW 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| FGD5T120SH | Hersteller : ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 5A; 28W; DPAK Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±25V Collector current: 5A Pulsed collector current: 12.5A Type of transistor: IGBT Power dissipation: 28W Kind of package: reel; tape Gate charge: 6.7nC Mounting: SMD Case: DPAK Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FGD5T120SH | Hersteller : onsemi |
Description: IGBT 1200V 5A FS3 DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 5A Supplier Device Package: TO-252AA IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 4.8ns/24.8ns Switching Energy: 247µJ (on), 94µJ (off) Test Condition: 600V, 5A, 30Ohm, 15V Gate Charge: 6.7 nC Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 12.5 A Power - Max: 69 W |
Produkt ist nicht verfügbar |
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FGD5T120SH | Hersteller : onsemi |
Description: IGBT 1200V 5A FS3 DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 5A Supplier Device Package: TO-252AA IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 4.8ns/24.8ns Switching Energy: 247µJ (on), 94µJ (off) Test Condition: 600V, 5A, 30Ohm, 15V Gate Charge: 6.7 nC Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 12.5 A Power - Max: 69 W |
Produkt ist nicht verfügbar |
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| FGD5T120SH | Hersteller : ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 5A; 28W; DPAK Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±25V Collector current: 5A Pulsed collector current: 12.5A Type of transistor: IGBT Power dissipation: 28W Kind of package: reel; tape Gate charge: 6.7nC Mounting: SMD Case: DPAK |
Produkt ist nicht verfügbar |